鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
1
2
3
TO-220
TO-220FP
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
APPLICATIONS
鈻?/div>
MOTOR CONTROL
鈻?/div>
DC-DC & DC-AC CONVERTERS
Figure 2: Internal Schematic Diagram
Table 2:
Order Codes
PART NUMBER
STP12PF06
STF12PF06
MARKING
P12PF06
F12PF06
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
Table 3:
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS (2)
T
stg
T
j
Parameter
STP20PF06
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
60
60
鹵 20
12
8.4
48
60
0.4
6
200
-55 to 175
(1) I
SD
鈮?2A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 12A, V
DD
= 25V
Value
STF20PF06
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
8
5.6
32
225
0.17
(鈥?
Pulse width limited by safe operating area.
NOTE
:
For the P-CHANNEL MOSFET actual polarity of voltages
and current has to be reversed.
March 2005
Rev.
2.0
1/10
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