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STE53NC50 Datasheet

  • STE53NC50

  • N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMesh⑩II MOSFET

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STE53NC50
N-CHANNEL 500V - 0.070鈩?- 53A ISOTOP
PowerMesh鈩I MOSFET
TYPE
STE53NC50
n
n
n
n
n
V
DSS
500V
R
DS(on)
< 0.08鈩?/div>
I
D
53 A
TYPICAL R
DS
(on) = 0.07
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
鈩?/div>
II is the evolution of the first
generation of MESH OVERLAY
鈩?
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITH MODE POWER SUPPLIES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
dv/dt (1)
V
ISO
T
stg
T
j
May 2002
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (AC-RMS)
Storage Temperature
Max. Operating Junction Temperature
Value
500
500
鹵30
53
33
212
460
3.68
3
2500
鈥?65 to 150
150
(1) I
SD
鈮?/div>
53A, di/dt鈮?00 A/碌s, V
DD
鈮?/div>
24V, Tj鈮
jMAX
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
V
擄C
擄C
1/8
(鈥?Pulse width limited by safe operating area

STE53NC50 產(chǎn)品屬性

  • STE53NC50 View All Specifications

  • 10

  • 半導(dǎo)體模塊

  • FET

  • PowerMESH™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 500V

  • 53A

  • 80 毫歐 @ 27A，10V

  • 4V @ 250µA

  • 434nC @ 10V

  • 11200pF @ 25V

  • 460W

  • 底座安裝

  • ISOTOP

  • ISOTOP?

  • 管件

  • 497-2776-5

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