STE50DE100
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
ESBT鈩?1000 V - 50 A - 0.026
W
POWER MODULE
Table 1: General Features
V
CS(ON)
1.3 V
n
Figure 1: Package
R
CS(ON)
0.026
W
I
C
50 A
n
n
n
n
HIGH VOLTAGE / HIGH CURRENT
CASCODE CONFIGURATION
ULTRA LOW EQUIVALENT ON
RESISTANCE
VERY FAST-SWITCH, UP TO 150 kHz
ULTRA LOW C
ISS
LOW DYNAMIC V
CS(ON)
ISOTOP
APPLICATION
n
INDUSTRIAL CONVERTERS
n
WELDING
DESCRIPTION
The STE50DE100 is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STE50DE100 is designed for use in industrial
converters and/or welding equipment.
Figure 2: Internal Schematic Diagram
Electrical Symbol
Table 2: Order Code
Part Number
STE50DE100
Marking
STE50DE100
Package
ISOTOP
Device Structure
Packaging
TUBE
October 2004
Rev. 1
1/9