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STE48NM60 Datasheet

  • STE48NM60

  • N-CHANNEL 600V 0.09 OHM 48A ISOTOP MDMESH POWER MOSFET

  • 343.37KB

  • 8頁

  • ETC

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STE48NM60
N-CHANNEL 600V - 0.09鈩?- 48A ISOTOP
MDmesh鈩ower MOSFET
TYPE
STE48NM60
V
DSS
600V
R
DS(on)
< 0.11鈩?/div>
I
D
48 A
TYPICAL R
DS
(on) = 0.09鈩?/div>
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh鈩?is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company鈥檚 PowerMESH鈩?horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company鈥檚 proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition鈥檚 products.
APPLICATIONS
The MDmesh鈩?family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
dv/dt (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
600
600
鹵30
48
30
192
450
3.57
15
鈥?5 to 150
150
(1) I
SD
鈮?8A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
擄C
擄C
(鈥?Pulse width limited by safe operating area
June 2003
1/8

STE48NM60 產(chǎn)品屬性

  • 50

  • 半導(dǎo)體模塊

  • FET

  • MDmesh™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 650V

  • 48A

  • 110 毫歐 @ 22.5A，10V

  • 5V @ 250µA

  • 134nC @ 10V

  • 3800pF @ 25V

  • 450W

  • 底座安裝

  • ISOTOP

  • ISOTOP?

  • 管件

  • 497-3171-5

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