鈩?/div>
APPLICATION ORIENTED
CHARACTERIZATION
ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
1
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size鈩?quot; strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(
*
)
I
D
I
DM
(鈥?
P
tot
E
AS (1)
T
st g
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
(
1
) starting T
j
= 25 C, I
D
=12A , V
DD
= 30V
o
Value
55
55
鹵
20
12
8
48
35
0.23
25
-65 to 175
175
o
Unit
V
V
V
A
A
A
W
W/
o
C
mJ
o
o
C
C
(鈥? Pulse width limited by safe operating area
New R
DS(on)
spec. starting from July 鈥?8
May 2000
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