廬
STD93003
HIGH VOLTAGE FAST-SWITCHING
PNP POWER TRANSISTOR
s
s
s
s
s
s
s
REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) / DPAK (TO-252) PACKAGES
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (Suffix "-1")
3
2
1
1
3
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STD93003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STD83003, its
complementary NPN transistor.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage
(I
C
= 0, I
B
= -0.75 A, t
p
< 10碌s, T
j
< 150
o
C)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
IPAK
TO-251
(Suffix "-1")
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
Value
-500
-400
V
(BR)EBO
-1.5
-3
-0.75
-1.5
20
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
October 2002
1/8