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STD6NF10 Datasheet

  • STD6NF10

  • N-CHANNEL 100V - 0.22 ohm - 6A IPAK/DPAK LOW GATE CHARGE STr...

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 100V - 0.22
鈩?/div>
- 6A IPAK/DPAK
LOW GATE CHARGE STripFET鈩?POWER MOSFET
TYPE
STD6NF10
s
s
s
s
s
STD6NF10
V
DSS
100 V
R
DS(on)
<0.250
鈩?/div>
I
D
6A
s
TYPICAL R
DS
(on) = 0.22
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW THRESHOLD DRIVE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX 鈥?1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥淭4")
3
2
1
IPAK
TO-251
(Suffix 鈥?1鈥?
DPAK
TO-252
(Suffix 鈥淭4鈥?
3
1
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM(
鈥?
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Value
100
100
鹵 20
6
4
Unit
V
V
V
A
A
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
24
30
0.2
40
200
-65 to 175
(1) I
SD
鈮?A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 3A, V
DD
= 50V
A
W
W/擄C
V/ns
mJ
擄C
P
tot
dv/dt
(1)
E
AS (2)
T
stg
T
j
(
鈥?
Pulse width limited by safe operating area.
June 2001
.
1/9

STD6NF10 產(chǎn)品屬性

  • 20 ns

  • 6 ns

  • 10 nC V @ 10

  • 280 pF V @ 25

  • 表面貼裝

  • 6.2mm

  • DPAK

  • 6.6 x 6.2 x 2.4mm

  • 3

  • -65 °C

  • 30000 mW

  • ±20 V

  • 100 V

  • 0.25

  • 6 A

  • +175 °C

  • 1

  • 功率 MOSFET

  • 增強

  • N

  • 單

  • 6.6mm

  • 2.4mm

STD6NF10相關(guān)型號PDF文件下載

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