鈩⑩€?/div>
strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility..
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
AUTOMOTIVE
s
MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
dv/dt (1)
E
AS
(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
55
55
鹵 15
60
42
240
110
0.73
16
400
鈥?55 to 175
(1)I
SD
鈮?0A,
di/dt
鈮?50A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
(2) Starting T
j
=25擄C, I
D
=30A, V
DD
=20V
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(
q
) Pulse width limited by safe operating area
April 2002
1/9
next