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STD5NE10 Datasheet

  • STD5NE10

  • N - CHANNEL 100V - 0.32 ohm - 5A TO-251/TO-252 STripFET] POW...

  • 3頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STD5NE10
N - CHANNEL 100V - 0.32
鈩?/div>
- 5A TO-251/TO-252
STripFET鈩?POWER MOSFET
TYPE
STD5NE10
s
s
s
s
s
V
DSS
100 V
R
DS(o n)
< 0.4
鈩?/div>
I
D
5 A
s
TYPICAL R
DS(on)
= 0.32
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE TESTED
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
ADD SUFFIX 鈥漈4鈥?FOR ORDERING IN TAPE
& REEL
IPAK
TO-251
(Suffix 鈥?1鈥?
3
2
1
1
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size鈩⑩€?strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
MOTOR CONTROL (DISK DRIVES, etc.)
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
DPAK
TO-252
(Suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
T
st g
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating F actor
Peak Diode Recovery voltage slope
Storage T emperature
Max. Operating Junction Temperature
o
Value
100
100
鹵
20
5
3.5
20
25
0.17
0.6
-65 to 175
175
(
1
) I
SD
鈮?/div>
5A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
(鈥? Pulse width limited by safe operating area
May 1999
1/9

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