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STD4NC50 Datasheet

  • STD4NC50

  • N - CHANNEL 500V - 1.3 ohm - 3.7 A TO-251 PowerMESH MOSFET

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STD4NC50
N - CHANNEL 500V - 1.3
鈩?/div>
- 3.7 A TO-251
PowerMESH鈩?MOSFET
TYPE
ST D4NC50
s
s
s
s
s
V
DSS
500 V
R
DS(on)
< 1.5
鈩?/div>
I
D
3.7 A
TYPICAL R
DS(on)
= 1.3
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
3
2
1
IPAK
TO-251
(Suffix 鈥?1鈥?
DESCRIPTION
The PowerMESH鈩I is the evolution of the first
generation of MESH OVERLAY鈩? The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
鈥?/div>
)
P
tot
dv/dt(
1
)
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
Value
500
500
鹵
30
3.7
2.3
14.8
50
0.4
3
-65 to 150
150
(
1
) I
SD
鈮?.7
A, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
(鈥? Pulse width limited by safe operating area
September 1999
1/8

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