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STD4N20 Datasheet

  • STD4N20

  • N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY⑩ MOSFET

  • 9頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STD4N20
N-CHANNEL 200V - 1.2鈩?- 4A DPAK/IPAK
MESH OVERLAY鈩?MOSFET
TYPE
STD4N20
s
s
s
s
V
DSS
200 V
R
DS(on)
< 1.5
鈩?/div>
I
D
4A
TYPICAL R
DS
(on) = 1.2
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
ADD SUFFIX 鈥淭4鈥?FOR OREDERING IN TAPE &
REEL
3
1
DPAK
TO-252
IPAK
TO-251
2
1
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company鈥檚 proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
dv/dt (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
200
200
鹵20
4
2.5
16
40
0.32
5
鈥?5 to 150
150
(1)I
SD
鈮?A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
擄C
擄C
(鈥?Pulse width limited by safe operating area
February 2001
1/9

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