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STD40NF06 Datasheet

  • STD40NF06

  • N-CHANNEL 60V - 0.024 ohm - 40A DPAK STripFET⑩ II POWER MOS...

  • 9頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 60V - 0.024
鈩?/div>
- 40A DPAK
STripFET鈩?II POWER MOSFET
TYPE
STD40NF06
s
s
s
s
STD40NF06
V
DSS
60 V
R
DS(on)
<0.028
鈩?/div>
I
D
40 A
TYPICAL R
DS
(on) = 0.024
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥淭4")
3
1
DPAK
TO-252
(Suffix 鈥淭4鈥?
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot; strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
manufacturing
reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
MOTOR CONTROL , AUDIO AMPLIFIERS
s
SOLENOID AND RELAY DRIVERS
s
DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS
(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
60
60
鹵 20
40
28
160
85
0.57
10
250
-55 to 175
(1) I
SD
鈮?0A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 20 A, V
DD
= 30 V
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(鈥?
Pulse width limited by safe operating area.
January 2003
1/9

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