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STD40NE03L Datasheet

  • STD40NE03L

  • N - CHANNEL 30V - 0.012 ohm - 40A TO-252 STripFET POWER MOSF...

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STD40NE03L
N - CHANNEL 30V - 0.012
鈩?/div>
- 40A TO-252
STripFET鈩?POWER MOSFET
TYPE
STD40NE03L
s
s
s
s
s
V
DSS
30 V
R
DS(o n)
< 0.016
鈩?/div>
I
D
40 A
s
TYPICAL R
DS(on)
= 0.012
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
ADD SUFFIX 鈥漈4鈥?FOR ORDERING IN TAPE
& REEL
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size鈩⑩€?strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
DPAK
TO-252
(Suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
鈥?/div>
)
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
dv/ dt (
1
) Peak Diode Recovery voltage slope
T
st g
T
j
Storage Temperature
Max. Operating Junction Temperature
o
Value
30
30
鹵
20
20**
20**
160
55
0.37
7
-65 to 175
175
(
1
) I
SD
鈮?0A,
di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
(鈥? Pulse width limited by safe operating area
(**)
Value limi ted only by the package
September 1999
1/8

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