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STD3NB50 Datasheet

  • STD3NB50

  • N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STD3NB50
N - CHANNEL 500V - 2.5鈩?- 3A - IPAK/DPAK
PowerMESH鈩?MOSFET
PRELIMINARY DATA
TYPE
STD3NB50
s
s
s
s
s
V
DSS
500 V
R
DS(on)
< 2.8
鈩?/div>
I
D
3A
TYPICAL R
DS(on)
= 2.5
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
2
1
3
1
DPAK
TO-252
(Suffix "T4")
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
IPAK
TO-251
(Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
T
stg
T
j
May 1998
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
Value
500
500
鹵
30
3
1.9
12
50
0.4
4.5
-65 to 150
150
(
1
) I
SD
鈮?A,
di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/ C
V/ns
o
o
o
C
C
1/6
(鈥? Pulse width limited by safe operating area
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

STD3NB50 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 500 V

  • +/- 30 V

  • 3 A

  • 2.8 Ohms

  • Single

  • + 150 C

  • SMD/SMT

  • TO-252

  • 5 ns

  • - 65 C

  • 50 W

  • 8 ns

  • 3000

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