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STD3NB30 Datasheet

  • STD3NB30

  • N - CHANNEL 300V - 1.8ohm - 3.2A - DPAK PowerMESH MOSFET

  • 8頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STD3NB30
N - CHANNEL 300V - 1.8鈩?- 3.2A - DPAK
PowerMESH鈩?MOSFET
TYPE
ST D3NB30
s
s
s
s
s
s
V
DSS
300 V
R
DS(on)
< 2鈩?/div>
I
D
3.2 A
TYPICAL R
DS(on)
=1.8
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
ADD SUFFIX 鈥漈4鈥?FOR ORDERING IN TAPE
& REEL (2500 UNITS)
3
1
DPAK
TO-252
(Suffix 鈥漈4鈥?
DESCRIPTION
Using the latest high voltage MESH OVERLAY
鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
300
300
鹵
30
3.2
2
12.8
40
0.32
5.5
-65 to 150
150
(
1
) I
SD
鈮?.2A,
di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
1/8
(鈥? Pulse width limited by safe operating area
January 1999

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