鈩?/div>
OPTIMIZED FOR HIGH SWTICHING
OPERATIONS
LOW THRESHOLD DRIVE
ADD SUFFIX 鈥漈4鈥?FOR ORDERING IN TAPE
& REEL
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size鈩⑩€?strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
DPAK
TO-252
(Suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
(
*
)
I
D
I
DM
(
鈥?/div>
)
P
tot
T
st g
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
o
Value
30
30
鹵
20
38
27
152
45
0.3
-65 to 175
175
(
*
)Value limited by the package
Unit
V
V
V
A
A
A
W
W /
o
C
o
o
C
C
(
鈥?/div>
) Pulse width limited by safe operating area
March 2000
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