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STD35NF06 Datasheet

  • STD35NF06

  • N-CHANNEL 60V - 0.018ohm - 35A DPAK STripFET⑩II MOSFET

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STD35NF06
N-CHANNEL 60V - 0.018鈩?- 35A DPAK
STripFET鈩I MOSFET
TYPE
STD35NF06
s
s
s
s
V
DSS
60 V
R
DS(on)
< 0.024
鈩?/div>
I
D
35 A
TYPICAL R
DS
(on) = 0.018
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
3
1
DPAK
DESCRIPTION
This Power Mosfet is the latest development of ST-
Microelectronics unique 鈥淪ingle Feature Size鈩⑩€?/div>
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalance characteristics and less crit-
ical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
dv/dt (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
60
60
鹵 20
35
24.5
140
55
0.37
5
鈥?5 to 175
(1)I
SD
鈮?5A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
擄C
(鈥?Pulse width limited by safe operating area
October 2001
1/9

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