(on) = 0.025鈩?/div>
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW TRESHOLD DEVICE
LOW GATE CHARGE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX 鈥?1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥淭4")
3
2
1
IPAK
TO-251
(Suffix 鈥?1鈥?
DPAK
TO-252
(Suffix 鈥淭4鈥?
3
1
DESCRIPTION
This MOSFET is the latest development of
STMicroelectronics unique 鈥淪ingle Feature Size鈩⑩€?strip-
based process The resulting transistor shows extremely
high packing density for low on-resistance and low gate
charge.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
DC-DC CONVERTERS
Ordering Information
SALES TYPE
STD30PF03LT4
STD30PF03L-1
MARKING
D30PF30L
D30PF30L
PACKAGE
TO-252
TO-251
PACKAGING
TAPE & REEL
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D(#)
I
D(#)
I
DM
(鈥?
P
tot
E
AS(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
30
30
鹵 16
24
24
96
70
0.47
850
-55 to 175
Unit
V
V
V
A
A
A
W
W/擄C
mJ
擄C
(鈥?
Pulse width limited by safe operating area.
(#) Current limited by wire bonding
(1) Starting T
j
= 25
o
C, I
D
=12 A, V
DD
= 15V
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
May 2003
.
1/10