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STD30NE06 Datasheet

  • STD30NE06

  • N - CHANNEL 60V - 0.025 ohm - 30A - DPAK STripFET POWER MOSF...

  • 5頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STD30NE06
N - CHANNEL 60V - 0.025
鈩?/div>
- 30A - DPAK
STripFET鈩?" POWER MOSFET
PRELIMINARY DATA
TYPE
STD30NE06
s
s
s
s
s
V
DSS
60 V
R
DS(on)
< 0.03
鈩?/div>
I
D
30 A
s
TYPICAL R
DS(on)
= 0.025
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
FOR TAPE & REEL AND OTHER
PACKAGING OPTIONS CONTACT SALES
OFFICES
3
1
DPAK
TO-252
(Suffix "T4")
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size鈩?"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
T
stg
T
j
July 1998
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
Value
60
60
鹵
20
30
21
120
55
0.37
7
-65 to 175
175
(
1
) I
SD
鈮?0
A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/ C
V/ns
o
o
o
C
C
1/5
(鈥? Pulse width limited by safe operating area

STD30NE06 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 60 V

  • +/- 20 V

  • 30 A

  • 0.03 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • TO-252

  • Tube

  • 45 ns

  • - 65 C

  • 55 W

  • 100 ns

  • 75

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