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STD2NM60 Datasheet

  • STD2NM60

  • N-CHANNEL 600V - 2.8ohm - 2A DPAK/IPAK Zener-Protected MDmes...

  • 476.43KB

  • 10頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STD2NM60
STD2NM60-1
N-CHANNEL 600V - 2.8鈩?- 2A DPAK/IPAK
Zener-Protected MDmesh鈩ower MOSFET
TYPE
STD2NM60
STD2NM60-1
s
s
s
s
V
DSS
600V
600V
R
DS(on)
< 3.2
鈩?/div>
< 3.2
鈩?/div>
I
D
2A
2A
s
s
TYPICAL R
DS
(on) = 2.8
鈩?/div>
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
3
1
2
1
3
DPAK
TO-252
IPAK
TO-251
DESCRIPTION
The MDmesh鈩?is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company鈥檚 PowerMESH鈩?horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company鈥檚 proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition鈥檚 products.
APPLICATIONS
The MDmesh鈩?family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
V
ESD(G-S)
dv/dt(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K鈩?
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value
600
600
鹵30
2
1.26
8
46
0.37
1
15
鈥?5 to 150
150
(1)I
SD
<2A, di/dt<400A/碌s, V
DD
<V
(BR)DSS
, T
J
<T
JMAX
Unit
V
V
V
A
A
A
W
W/擄C
kV
V/ns
擄C
擄C
(鈥?Pulse width limited by safe operating area
September 2002
1/10

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