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STD2NB80 Datasheet

  • STD2NB80

  • N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSF...

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STD2NB80
N - CHANNEL 800V - 4.6
鈩?/div>
- 1.9A - IPAK/DPAK
PowerMESH鈩?MOSFET
TYPE
ST D2NB80
s
s
s
s
s
s
V
DSS
800 V
R
DS(on)
< 6.5
鈩?/div>
I
D
1.9 A
TYPICAL R
DS(on)
= 4.6
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
ADD SUFFIX 鈥漈4鈥?FOR ORDERING IN TAPE
& REEL (2500 UNITS)
IPAK
TO-251
(Suffix 鈥?1鈥?
3
2
1
1
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
DPAK
TO-252
(Suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
鈩?/div>
)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
dv/dt(
1
)
T
s tg
T
j
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
o
o
Value
800
800
鹵
30
1.9
1.2
7.6
55
0.44
4.5
-65 to 150
150
(
1
) I
SD
鈮?/div>
2A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
1/9
(鈥? Pulse width limited by safe operating area
January 1999

STD2NB80 產(chǎn)品屬性

  • STMicroelectronics

  • MOSFET

  • N-Channel

  • 800 V

  • +/- 30 V

  • 1.9 A

  • 6.5 Ohms

  • Single

  • + 150 C

  • SMD/SMT

  • TO-252

  • Tube

  • 17 ns

  • - 65 C

  • 55 W

  • 10 ns

  • 75

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