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STD25NE03L Datasheet

  • STD25NE03L

  • N - CHANNEL 30V - 0.019 ohm - 25A - TO-251/TO-252 STripFET P...

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STD25NE03L
N - CHANNEL 30V - 0.019
鈩?/div>
- 25A - TO-251/TO-252
STripFET鈩?POWER MOSFET
TYPE
STD25NE03L
s
s
s
s
V
DSS
30 V
R
DS(o n)
< 0.025
鈩?/div>
I
D
25 A
TYPICAL R
DS(on)
= 0.019
鈩?/div>
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
1
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size
鈩?/div>
鈥?strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s
AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BG, LAMPDRIVERS, Etc.)
IPAK
TO-251
(Suffix 鈥?1鈥?
DPAK
TO-252
(Suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
T
st g
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating F actor
Storage T emperature
Max. Operating Junction Temperature
o
Value
30
30
鹵
20
20**
18**
100
45
0.3
-65 to 175
175
(**) Value limited only by the package
Unit
V
V
V
A
A
A
W
W /
o
C
o
o
C
C
(鈥? Pulse width limited by safe operating area
March 1999
1/9

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