鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
1
DPAK
TO-252
(Suffix 鈥淭4鈥?
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
鈻?/div>
HIGH SWITCHING APPLICATIONS
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STD20NF06
MARKING
D20NF06
PACKAGE
TO-252
PACKAGING
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
鈥?
P
tot
dv/dt
(1)
E
AS(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
鈩?/div>
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
60
60
鹵 20
24
17
96
60
0.4
10
300
-55 to 175
(1) I
SD
鈮?/div>
24A, di/dt
鈮?/div>
100A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
=10 A, V
DD
= 45V
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(
鈥?
Pulse width limited by safe operating area.
June 2004
Rev.3.0.6
1/10
next
STD20NF06 產(chǎn)品屬性
30 ns
10 ns
23 nC V @ 10
690 pF V @ 25
表面貼裝
6.2mm
TO-252
6.6 x 6.2 x 2.4mm
3
-55 °C
60000 mW
±20 V
60 V
0.04
24 A
+175 °C
1
功率 MOSFET
增強(qiáng)
N
單
6.6mm
2.4mm
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