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STD20NF06L Datasheet

  • STD20NF06L

  • N-CHANNEL 60V - 0.032 OHM - 24A DPAK STRIPFET II POWER MOSFE...

  • 7頁

  • ETC

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N-CHANNEL 60V - 0.032
鈩?/div>
- 24A DPAK
STripFET鈩?II POWER MOSFET
PRELIMINARY DATA
TYPE
STD20NF06L
s
s
s
s
STD20NF06L
V
DSS
60 V
R
DS(on)
< 0.040
鈩?/div>
I
D
24 A
s
TYPICAL R
DS
(on) = 0.032
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥淭4")
3
1
DPAK
TO-252
(Suffix 鈥淭4鈥?
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot; strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
manufacturing
reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
POWER TOOLS
s
AUTOMOTIVE ENVIRONMENT
Ordering Information
SALES TYPE
STD20NF06L
MARKING
STD20NF06L
PACKAGE
TO-252
PACKAGING
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
60
60
鹵 18
24
17
96
60
0.4
10
235
-55 to 175
(1) I
SD
鈮?0A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 15A, V
DD
= 30V
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(鈥?
Pulse width limited by safe operating area.
June 2003
1/7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

STD20NF06L 產(chǎn)品屬性

  • 20 ns

  • 11 ns

  • 13 nC V @ 10

  • 660 pF V @ 25

  • 表面貼裝

  • 6.2mm

  • TO-252

  • 6.6 x 6.2 x 2.4mm

  • 3

  • -55 °C

  • 60000 mW

  • ±18 V

  • 60 V

  • 0.04

  • 24 A

  • +175 °C

  • 1

  • 功率 MOSFET

  • 增強

  • N

  • 單

  • 6.6mm

  • 2.4mm

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