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STD20N06 Datasheet

  • STD20N06

  • N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MO...

  • 10頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STD20N06
N - CHANNEL ENHANCEMENT MODE
鈥漊LTRA HIGH DENSITY鈥?POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
STD20N06
s
s
s
s
s
s
s
s
V
DSS
60 V
R
DS( on)
< 0.03
鈩?/div>
I
D
20 A (*)
s
TYPICAL R
DS(on)
= 0.026
鈩?/div>
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
HIGH CURRENT CAPABILITY
o
175 C OPERATING TEMPERATURE
HIGH dV/dt RUGGEDNESS
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX 鈥?1鈥?
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥漈4鈥?
3
1
IPAK
TO-251
(Suffix 鈥?1鈥?
2
1
DPAK
TO-252
3
(Suffix 鈥漈4鈥?
DESCRIPTION
This series of POWER MOSFETS represents the
latest development in low voltage technology.
The ultra high cell density process (UHD) produ-
ced with fine geometries on advanced equipment
gives the device extremely low R
DS(on)
as well as
good switching performance and high avalanche
energy capability.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
POWER MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(鈥?
P
tot
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
o
INTERNAL SCHEMATIC DIAGRAM
Value
60
60
鹵
20
20
14
80
60
0.4
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/
o
C
o
o
C
C
(*) Current limited by the package
(鈥? Pulse width limited by safe operating area (*)
March 1995
1/10

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