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STD1NB60 Datasheet

  • STD1NB60

  • N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET

  • 6頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STD1NB60
N - CHANNEL 600V - 7.4鈩?- 1A - IPAK/DPAK
PowerMESH鈩?MOSFET
PRELIMINARY DATA
TYPE
STD1NB60
s
s
s
s
s
V
DSS
600 V
R
DS(on)
< 8.5
鈩?/div>
I
D
1A
TYPICAL R
DS(on)
= 7.4
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
2
1
1
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
IPAK
TO-251
(Suffix "-1")
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
Value
600
600
鹵
30
1
0.63
4
45
0.36
3.5
-65 to 150
150
(
1
) I
SD
鈮? 螒,
di/dt 芒 200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
o
C
C
1/6
(鈥? Pulse width limited by safe operating area
November 1999

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