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STD19NE06 Datasheet

  • STD19NE06

  • N-CHANNEL 60V - 0.042 W - 19A IPAK/DPAK STripFET POWER MOSFE...

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 60V - 0.042
鈩?/div>
- 19A IPAK/DPAK
STripFET鈩?POWER MOSFET
TYPE
STD19NE06
s
s
s
s
s
STD19NE06
V
DSS
60 V
R
DS(on)
<0.050
鈩?/div>
I
D
19 A
s
TYPICAL R
DS
(on) = 0.042
鈩?/div>
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
175
o
C OPERATING TEMPERATURE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX 鈥?1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥淭4")
3
2
1
IPAK
TO-251
(Suffix 鈥?1鈥?
DPAK
TO-252
(Suffix 鈥淭4鈥?
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot; strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
manufacturing
reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
E
AS (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
60
60
鹵 20
19
13.5
76
70
0.46
1.45
-55 to 175
(1) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 30 V
Unit
V
V
V
A
A
A
W
W/擄C
mJ
擄C
(鈥?
Pulse width limited by safe operating area
March 2002
.
1/9

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