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STD16NE10 Datasheet

  • STD16NE10

  • N - CHANNEL 100V - 0.07ohm - 16A - IPAK/DPAK STripFET MOSFET

  • 9頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STD16NE10
N - CHANNEL 100V - 0.07鈩?- 16A - IPAK/DPAK
STripFET鈩?MOSFET
TYPE
ST D16NE10
s
s
s
s
s
V
DSS
100 V
R
DS(on)
< 0.1
鈩?/div>
I
D
16 A
s
s
TYPICAL R
DS(on)
= 0.07
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
THROUG-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX 鈥?1鈥?
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥漈4鈥?
3
2
1
1
3
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique 鈥漇ingle Feature Size鈩?鈥?/div>
strip-based process.The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL (DISK DRIVERS,etc.)
s
DC-DC & DC-ACCONVERTERS
s
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating F actor
dv/dt(
1
)
T
stg
T
j
July 1998
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junction Temperature
o
o
IPAK
TO-251
(Suffix 鈥?1鈥?
DPAK
TO-252
(Suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
Value
100
100
鹵
20
16
11
64
50
0.33
7
-65 to 175
175
(
1
) I
SD
鈮?/div>
16 A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Uni t
V
V
V
A
A
A
W
W/
o
C
V/ ns
o
o
C
C
1/9
(鈥? Pulse width limited by safe operating area

STD16NE10 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 100 V

  • +/- 20 V

  • 16 A

  • 0.07 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • DPAK

  • 18 ns

  • - 65 C

  • 50 W

  • 37 ns

  • 75

STD16NE10相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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    描述
    廠商
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  • 英文版
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  • 英文版
    STD131|Data Sheet
    ETC
  • 英文版
    STD150|Data Sheet
    ETC
  • 英文版
    Thyristor-Diode Modules, Diode-Thyristor Modules
    SIRECTIFIER
  • 英文版
    This axial leaded strap product is designed to provide relia...
    LITTELFUSE
  • 英文版
    Thyristor-Diode Modules, Diode-Thyristor Modules
    SIRECTIFIER
  • 英文版
    This axial leaded strap product is designed to provide relia...
    LITTELFUSE
  • 英文版
    Epitaxial planar NPN silicon transistor
    AUK

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