鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
THROUG-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX 鈥?1鈥?
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥漈4鈥?
3
2
1
1
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥漇TripFET鈩⑩€?strip-ba-
sed process.The resulting transistor shows extre-
mely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufac-
turing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
IPAK
TO-251
(Suffix 鈥?1鈥?
DPAK
TO-252
(Suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
Value
60
60
鹵
20
16
11
64
40
0.26
7
-65 to 175
175
(
1
) I
SD
鈮?/div>
16 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
(鈥? Pulse width limited by safe operating area
February 2000
1/9
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