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STD12NF06L Datasheet

  • STD12NF06L

  • N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET⑩ II POWER...

  • 10頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 60V - 0.08
鈩?/div>
- 12A IPAK/DPAK
STripFET鈩?II POWER MOSFET
TYPE
STD12NF06L
s
s
s
s
s
STD12NF06L
V
DSS
60 V
R
DS(on)
< 0.1
鈩?/div>
I
D
12 A
s
TYPICAL R
DS
(on) = 0.08
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE
LOW THRESHOLD DRIVE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX 鈥?1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥淭4")
3
2
1
IPAK
TO-251
(Suffix 鈥?1鈥?
DPAK
TO-252
(Suffix 鈥淭4鈥?
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot; strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
manufacturing
reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS (2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
60
60
鹵 16
12
8.5
48
30
0.2
15
100
-55 to 175
(1) I
SD
鈮?2A,
di/dt
鈮?00A/碌s,
V
DD
=40V, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
AR
= 6A, V
DD
= 30V
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(鈥?
Pulse width limited by safe operating area.
June 2003
.
1/10

STD12NF06L 產(chǎn)品屬性

  • 20 ns

  • 10 ns

  • 7.5 nC V @ 5

  • 350 pF V @ 25

  • 表面貼裝

  • 6.2mm

  • DPAK

  • 6.6 x 6.2 x 2.4mm

  • 3

  • -55 °C

  • 30 W

  • ±16 V

  • 60 V

  • 0.1

  • 12 A

  • +175 °C

  • 1

  • 功率 MOSFET

  • 增強(qiáng)

  • N

  • 單

  • 6.6mm

  • 2.4mm

STD12NF06L相關(guān)型號(hào)PDF文件下載

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