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STD10PF06 Datasheet

  • STD10PF06

  • P - CHANNEL 60V - 0.18 ohm - 10A TO-252 STripFET POWER MOSFE...

  • 8頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STD10PF06
P - CHANNEL 60V - 0.18
鈩?/div>
- 10A TO-252
STripFET鈩?POWER MOSFET
TYPE
STD10PF06
s
s
s
s
s
V
DSS
60 V
R
DS(o n)
< 0.20
鈩?/div>
I
D
10 A
s
TYPICAL R
DS(on)
= 0.18
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
ADD SUFFIX 鈥漈4鈥?FOR ORDERING IN TAPE
& REEL
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size鈩⑩€?strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
DPAK
TO-252
(Suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
T
st g
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating F actor
Peak Diode Recovery voltage slope
Storage T emperature
Max. Operating Junction Temperature
o
Value
60
60
鹵
20
10
7
40
40
0.27
6
-65 to 175
175
Unit
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
(
鈥?/div>
) Pulse width limited by safe operating area
(
1
) I
SD
鈮?/div>
10 A, di/dt
鈮?/div>
300 A/
碌
s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
April 1999
1/8

STD10PF06 產(chǎn)品屬性

  • STMicroelectronics

  • MOSFET

  • P-Channel

  • - 60 V

  • +/- 20 V

  • 10 A

  • 0.18 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • TO-252

  • Tube

  • 10 ns

  • 5 S

  • - 65 C

  • 40 W

  • 40 ns

  • 75

  • 40 ns

STD10PF06相關(guān)型號(hào)PDF文件下載

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