鈩?/div>
@ 2.5 V
ULTRA LOW THRESHOLD
GATE DRIVE (2.5 V)
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DOUBLE DICE IN COMMON DRAIN
CONFIGURATION
TSSOP8
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
DC MOTOR DRIVE
s
DC-DC CONVERTERS
s
BATTERY SAFETY UNIT FOR NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Value
30
30
鹵 12
6
3.8
24
1.5
Unit
V
V
V
A
A
A
W
(鈥?
Pulse width limited by safe operating area.
February 2003
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