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STC08IE120HV Datasheet

  • STC08IE120HV

  • Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ...

  • 11頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STC08IE120HV
Emitter Switched Bipolar Transistor
ESBT 1200 V - 8 A - 0.10
鈩?/div>
General features
V
CS(ON)
0.8 V
鈻?/div>
I
C
8A
R
CS(ON)
High voltage / high current Cascode
configuration
Low equivalent on resistance
very fast-switch up to 150 kHz
Squared RBSOA up to 1200V
Very low C
iss
driven by R
G
= 47鈩?/div>
Very low turn-off cross over time
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
Applications
鈻?/div>
鈻?/div>
Flyback / forward SMPS
Sepic PFC
Description
The STC08IE120HV is manufactured in Monolith-
ic ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage
applications.
It is designed for use in Gate Driven based topolo-
gies.
Order codes
Part Number
STC08IE120HV
Marking
C08IE120HV
Package
TO247-4L HV
Packaging
Tube
January 2007
W
0.10
Internal schematic diagrams
Rev 3
廬
1
23
4
TO247-4L HV
1/11
www.st.com
11

STC08IE120HV 產(chǎn)品屬性

  • STMicroelectronics

  • 功率驅(qū)動(dòng)器IC

  • Tube

  • 30

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