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STC04IE170HV Datasheet

  • STC04IE170HV

  • Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17...

  • 256.15KB

  • 11頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STC04IE170HV
Emitter switched bipolar transistor
ESBT 1700V - 4A - 0.17
General features
Table 1.
V
CS(ON)
0.7V
鈻?/div>
General features
I
C
4A
R
CS(ON)
0.17鈩?/div>
High voltage / high current cascode
configuration
Low equivalent on resistance
Very fast-switch, up to 150 kHz
Squared RBSOA, up to 1700 V
Very low C
ISS
driven by R
G
= 47
鈩?/div>
Very low turn-off cross over time
In compliance with the 2002/93/EC European
Directive
1
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
23
4
TO247-4L HV
Internal schematic diagrams
Description
The STC04IE170HV is manufactured in
Monolithic ESBT technology, aimed to provide
the best performance in High Frequency / High
voltage applications. It is designed for use in Gate
Driven based topologies.
Applications
鈻?/div>
鈻?/div>
Flyback / forward SMPS
Buck-bust converter
Order codes
Part Number
STC04IE170HV
Marking
C04IE170HV
Package
TO247-4L HV
Packing
Tube
September 2006
Rev 1
1/11
www.st.com
11
W
廬

STC04IE170HV 產(chǎn)品屬性

  • STMicroelectronics

  • 功率驅(qū)動(dòng)器IC

  • Driver ICs - Various

  • Non-Inverting

  • 10 ns

  • 10 ns

  • 17 V

  • 0.1 mA

  • + 150 C

  • Through Hole

  • TO-247-4

  • Tube

  • - 40 C

  • 1

  • 4 A

  • 30

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