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STC04IE170HP Datasheet

  • STC04IE170HP

  • Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17OH...

  • 11頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STC04IE170HP
Emitter switched bipolar transistor
ESBT 1700V - 4A - 0.17
General features
Table 1.
V
CS(ON)
0.7V
鈻?/div>
General features
I
C
4A
R
CS(ON)
0.17鈩?/div>
High voltage / high current cascode
configuration
Low equivalent on resistance
Very fast-switch, up to 150 kHz
Squared RBSOA, up to 1700 V
Very low C
ISS
driven by R
G
= 47
鈩?/div>
Very low turn-off cross over time
In compliance with the 2002/93/EC European
Directive
TO247-4L HP
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
Internal schematic diagrams
Applications
鈻?/div>
Aux SMPS for three phase mains
Description
The STC04IE170HP is manufactured in
Monolithic ESBT technology, aimed to provide
the best performance in High Frequency / High
voltage applications. It is designed for use in Gate
Driven based topologies.
Order codes
Part Number
STC04IE170HP
Marking
C04IE170HP
Package
TO247-4LHP
Packing
Tube
November 2006
Rev 2
1/11
www.st.com
11
W
廬

STC04IE170HP 產(chǎn)品屬性

  • STMicroelectronics

  • Transistors Bipolar (BJT)

  • NPN

  • 8 A

  • 4

  • Single

  • + 150 C

  • Through Hole

  • TO-247

  • Tube

  • 4 A

  • - 40 C

  • 50 W

  • 30

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