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STBV32 Datasheet

  • STBV32

  • HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

  • 69.79KB

  • 7頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STBV32
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
ST13003 SILICON IN TO-92 PACKAGE
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STBV32 is designed for use in compact
fluorescent lamp application.
TO-92
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
t ot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25 C
St orage Temperature
Max. Operating Junction Temperature
o
Value
700
400
9
1.5
3
0.75
1.5
1.1
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
o
o
C
C
February 2000
1/7

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