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STB90NF03L Datasheet

  • STB90NF03L

  • N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripF...

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB90NF03L
N-CHANNEL 30V - 0.0056鈩?- 90A D
2
PAK
LOW GATE CHARGE STripFET鈩?POWER MOSFET
TYPE
STB90NF03L
s
s
s
s
s
V
DSS
30 V
R
DS(on)
< 0.0065
鈩?/div>
I
D
90 A
TYPICAL R
DS
(on) = 0.0056
鈩?/div>
TYPICAL Q
g
= 35 nC @ 5V
OPTIMAL R
DS
(on) x Q
g
TRADE-OFF
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
3
1
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique 鈥淪ingle
Feature Size
鈩⑩€?/div>
strip-based process. The resulting
transistor shows the best trade-off between on-re-
sistance and gate charge. When used as high and
low side in buck regulators, it gives the best perfor-
mance in terms of both conduction and switching
losses. This is extremely important for mother-
boards where fast switching and high efficiency are
of paramount importance.
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
s
APPLICATIONS
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Value
30
30
鹵 18
90
65
360
150
0.73
鈥?55 to 175
Unit
V
V
V
A
A
A
W
W/擄C
擄C
(
q
) Pulse width limited by safe operating area
October 2001
1/8

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