STB8NS25 Datasheet

IC型號：
STB8NS25
PDF描述：
N-CHANNEL 250V - 0.38ohm - 8A D2PAK MESH OVERLAY⑩ MOSFET
文件大小：
430.08KB
PDF頁數(shù)：
9頁
芯片廠家：
STMICROELECTRONICS

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STB8NS25

N-CHANNEL 250V - 0.38鈩?- 8A D

PAK

MESH OVERLAY鈩?MOSFET

TYPE

STB8NS25

DSS

250 V

DS(on)

< 0.45

鈩?/div>

TYPICAL R

(on) = 0.38

鈩?/div>

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

DESCRIPTION

Using the latest high voltage MESH OVERLAY鈩?/div>

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performance. The new patented STrip layout cou-

pled with the Company鈥檚 proprietary edge termina-

tion structure, makes it suitable in coverters for

lighting applications.

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

PAK

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

DGR

(*)

(

)

TOT

dv/dt (1)

stg

Parameter

Drain-source Voltage (V

= 0)

Drain-gate Voltage (R

= 20 k鈩?

Gate- source Voltage

Drain Current (continuos) at T

= 25擄C

Drain Current (continuos) at T

= 100擄C

Drain Current (pulsed)

Total Dissipation at T

= 25擄C

Derating Factor

Peak Diode Recovery voltage slope

Storage Temperature

Max. Operating Junction Temperature

Value

250

鹵 20

0.64

鈥?5 to 150

150

(1) I

鈮?/div>

8A, di/dt鈮?00 A/碌s, V

鈮?/div>

(BR)DSS

, Tj鈮

jMAX

(*)Limited only by maximum temperature allowed

Unit

W/擄C

V/ns

擄C

(鈥?Pulse width limited by safe operating area

July 2001

1/9

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