STB85NF55 Datasheet

IC型號(hào)：
STB85NF55
PDF描述：
N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET⑩ II ...
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STB85NF55

STP85NF55

N-CHANNEL 55V - 0.0062

鈩?/div>

- 80A D

PAK/TO-220

STripFET鈩?II POWER MOSFET

TYPE

STB85NF55

STP85NF55

DSS

55 V

DS(on)

<0.008

鈩?/div>

<0.008

鈩?/div>

80 A

TYPICAL R

(on) = 0.0062

鈩?/div>

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size鈩?quot;

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

SOLENOID AND RELAY DRIVERS

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC CONVERTERS

AUTOMOTIVE ENVIRONMENT

PAK

TO-263

(Suffix 鈥淭4鈥?

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

DGR

鈥?/div>

)

(鈥⑩€?

tot

dv/dt

(1)

(2)

stg

Parameter

Drain-source Voltage (V

= 0)

Drain-gate Voltage (R

= 20 k鈩?

Gate- source Voltage

Drain Current (continuous) at T

= 25擄C

Drain Current (continuous) at T

= 100擄C

Drain Current (pulsed)

Total Dissipation at T

= 25擄C

Derating Factor

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

Max. Operating Junction Temperature

Value

鹵 20

320

300

2.0

980

-55 to 175

Unit

W/擄C

V/ns

擄C

(

鈥?/div>

)Current Limited by Package

(鈥⑩€?

Pulse width limited by safe operating area

(1)

鈮?0A,

di/dt

鈮?00A/碌s,

鈮?/div>

(BR)DSS

, T

鈮?/div>

JMAX

(2)

Starting T

= 25

C I

= 40A

= 25V

January 2003

1/10

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