STB85NF3LL-1 Datasheet

IC型號：
STB85NF3LL-1
PDF描述：
N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE ...
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266.69KB
PDF頁數(shù)：
9頁
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STMICROELECTRONICS

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STP85NF3LL

STB85NF3LL-1

N-CHANNEL 30V - 0.006鈩?- 85A TO-220/I

PAK

LOW GATE CHARGE STripFET鈩?POWER MOSFET

PRELIMINARY DATA

TYPE

STP85NF3LL

STB85NF3LL-1

DSS

30 V

DS(on)

< 0.008

鈩?/div>

< 0.008

鈩?/div>

85 A

TYPICAL R

(on) = 0.0075

鈩?/div>

(@4.5V)

OPTIMAL R

DS(ON)

x Qg TRADE-OFF @4.5V

CONDUCTION LOSSES REDUCED

SWITCHING LOSSES REDUCED

PAK

DESCRIPTION

This application specific Power MOSFET is the

third genaration of STMicroelectronics unique 鈥?/div>

Single Feature Size鈥?strip-based process. The re-

sulting transistor shows the best trade-off between

on-resistance and gate charge. When used as

high and low side in buck regulators, it gives the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

TO-220

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol

DGR

(

)

TOT

stg

Parameter

Drain-source Voltage (V

= 0)

Drain-gate Voltage (R

= 20 k鈩?

Gate- source Voltage

Drain Current (continuos) at T

= 25擄C

Drain Current (continuos) at T

= 100擄C

Drain Current (pulsed)

Total Dissipation at T

= 25擄C

Derating Factor

Storage Temperature

Max. Operating Junction Temperature

Value

鹵 15

340

110

0.73

鈥?5 to 175

175

Unit

W/擄C

擄C

(

) Pulse width limited by safe operating area

March 2001

1/9

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