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STB80NF55-06

N - CHANNEL 55V - 0.005鈩?- 80A TO-262/TO-263

STripFET鈩?POWER MOSFET

PRELIMINARY DATA

TYPE

STB80NF55-06

s

V

DSS

55 V

R

DS( on)

< 0.0065

鈩?/div>

I

D

80 A

s

TYPICAL R

DS(on)

= 0.005

鈩?/div>

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

APPLICATION ORIENTED

CHARACTERIZATION

THROUGH-HOLE I2PAK (TO-262) POWER

PACKAGE IN TUBE (SUFFIX 鈥?1鈥?\

SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX)

OR IN TAPE & REEL (SUFFIX 鈥漈4鈥?

3

12

3

1

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics unique 鈥漇ingle Feature

Size

鈩?/div>

鈥?strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalance characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

(鈥?

P

tot

dv/dt

T

s tg

T

j

Parameter

Drain-source Voltage (V

GS

= 0)

Drain- gate Voltage (R

GS

= 20 k鈩?

G ate-source Voltage

Drain Current (continuous) at T

c

= 25

o

C

Drain Current (continuous) at T

c

= 100 C

Drain Current (pulsed)

T otal Dissipation at T

c

= 25

o

C

Derating Factor

Peak Diode Recovery voltage slope

Storage Temperature

Max. Operating Junction Temperature

o

I

2

PAK

TO-262

(suffix 鈥?1鈥?

D

2

PAK

TO-263

(suffix 鈥漈4鈥?

INTERNAL SCHEMATIC DIAGRAM

Value

55

鹵

20

80

57

320

210

1.43

7

-65 to 175

175

(

1

) I

SD

鈮?/div>

80 A, di/dt

鈮?/div>

300 A/碌s, V

DD

鈮?/div>

V

(BR)DSS

, T

j

鈮?/div>

T

JMAX

Un it

V

A

W

W /

o

C

V/ns

o

C

1/7

(鈥? Pulse width limited by safe operating area

October 1999

型號

版本

描述

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