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STB80NF03L-04 Datasheet

  • STB80NF03L-04

  • N-CHANNEL 30V - 0.0035 ohm - 80A TO-262/TO-263 STripFET POWE...

  • 7頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB80NF03L-04
N-CHANNEL 30V - 0.0035
鈩?/div>
- 80A TO-262/TO-263
STripFET鈩?POWER MOSFET
PRELIMINARY DATA
T YPE
STB80NF03L-04
s
s
s
s
s
V
DSS
30 V
R
DS(on)
< 0.004
鈩?/div>
I
D
80 A
s
TYPICAL R
DS(on)
= 0.0035
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW THRESHOLD DRIVE
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX 鈥?1鈥?
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX 鈥漈4鈥?
3
12
3
1
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size鈩⑩€?strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
T
s tg
T
j
March 2000
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
I
2
PAK
TO-262
(suffix 鈥?1鈥?
D
2
PAK
TO-263
(suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
Value
30
30
鹵
20
80
56
320
210
1.43
3.5
-65 to 175
175
(
1
) I
SD
鈮?/div>
80 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
1/7
(鈥? Pulse width limited by safe operating area

STB80NF03L-04 產(chǎn)品屬性

  • STMicroelectronics

  • MOSFET

  • N-Channel

  • 30 V

  • +/- 20 V

  • 80 A

  • 0.004 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • D2PAK

  • Tube

  • 95 ns

  • 50 S

  • - 65 C

  • 300 W

  • 270 ns

  • 50

  • 110 ns

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