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STB80NF03L-04T4 Datasheet

  • STB80NF03L-04T4

  • N-CHANNEL 30V - 0.0035ohm - 80A D2PAK/I2PAK/TO-220 STripFET...

  • 11頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 30V - 0.0035
鈩?/div>
- 80A D
2
PAK/I
2
PAK/TO-220
STripFET鈩?II POWER MOSFET
TYPE
STB80NF03L-04/-1
STP80NF03L-04
s
s
s
s
STP80NF03L-04
STB80NF03L-04 STB80NF03L-04-1
V
DSS
30 V
30 V
R
DS(on)
<0.004
鈩?/div>
<0.004
鈩?/div>
I
D
80 A
80 A
3
1
TYPICAL R
DS
(on) = 0.0035鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW THRESHOLD DRIVE
3
12
D
2
PAK
TO-263
I
2
PAK
TO-262
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot; strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
manufacturing
reproducibility.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
Ordering Information
SALES TYPE
STB80NF03L-04
STB80NF03L-04T4
STP80NF03L-04
STB80NF03L-04-1
MARKING
80NF03L-04 @
80NF03L-04 @
80NF03L-04 @
80NF03L-04 @
PACKAGE
D
2
PAK
D
2
PAK
TO-220
I
2
PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
V
DGR
V
GS
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
I
D
(**)
Drain Current (continuous) at T
C
= 100擄C
I
D
(**)
I
DM
(鈥?
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25擄C
Derating Factor
(1)
Peak Diode Recovery voltage slope
dv/dt
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(鈥?
Pulse width limited by safe operating area.
(**) Current Limited by Package
Value
30
30
鹵 20
80
80
320
300
2
2
2.3
-60 to 175
175
(1) I
SD
鈮?0A,
di/dt
鈮?40A/碌s,
V
DD
鈮?/div>
24V, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 20V
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
J
擄C
擄C
February 2003
.
1/11

STB80NF03L-04T4 產(chǎn)品屬性

  • STB80NF03L-04T4 View All Specifications

  • 1

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • STripFET™

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 80A

  • 4 毫歐 @ 40A，10V

  • 1V @ 250µA

  • 110nC @ 4.5V

  • 5500pF @ 25V

  • 300W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D2PAK

  • Digi-Reel?

  • 497-7952-6

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