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STB80NE06-10 Datasheet

  • STB80NE06-10

  • N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOS...

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB80NE06-10
N - CHANNEL ENHANCEMENT MODE
鈥?SINGLE FEATURE SIZE鈩?鈥?POWER MOSFET
TYPE
ST B80NE06-10
s
s
s
s
V
DSS
60 V
R
DS(on)
<0.01
鈩?/div>
I
D
80 A
s
TYPICAL R
DS(on)
= 0.0085
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
1
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique 鈥漇ingle Feature Size鈩?鈥?/div>
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
D
2
PAK
TO-263
(suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating F actor
dv/dt
T
stg
T
j
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junction Temperature
o
o
Value
60
60
鹵
20
80
57
320
150
1
7
-65 to 175
175
(
1
) I
SD
鈮?/div>
80 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Uni t
V
V
V
A
A
A
W
W/
o
C
V/ ns
o
o
C
C
(鈥? Pulse width limited by safe operating area
February 1998
1/8

STB80NE06-10 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 60 V

  • +/- 20 V

  • 80 A

  • 8.5 m Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • D2PAK

  • Tube

  • 75 ns

  • 38 S

  • - 65 C

  • 150 W

  • 150 ns

  • 50

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