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STB70NH03L Datasheet

  • STB70NH03L

  • N-CHANNEL 30V - 0.0075 OHM - 60A D2PAK STRIPFET III POWER MO...

  • 11頁

  • ETC

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N-CHANNEL 30V - 0.0075
鈩?/div>
- 60A D
2
PAK
STripFET鈩?III POWER MOSFET FOR DC-DC CONVERSION
TYPE
STB70NH03L
s
s
s
s
s
s
s
STB70NH03L
V
DSS
30 V
R
DS(on)
<0.009
鈩?/div>
I
D
60 A(1)
TYPICAL R
DS
(on) = 0.0075
鈩?/div>
@ 10V
TYPICAL R
DS
(on) = 0.009
鈩?/div>
@ 5 V
R
DS(ON)
* Qg INDUSTRY鈥檚 BENCHMARK
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX 鈥淭4鈥?
3
1
D
2
PAK
TO-263
(Suffix 鈥淭4鈥?
DESCRIPTION
The STB70NH03L utilizes the latest advanced design
rules of ST鈥檚 proprietary STripFET鈩?technology. It is ideal
in high performance DC-DC converter applications where
efficiency is to be achieved at very high output currents.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC-DC
CONVERTERS
Ordering Information
SALES TYPE
STB70NH03LT4
s
MARKING
B70NH03L
PACKAGE
TO-263
PACKAGING
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(1)
I
D
(1)
I
DM
(
2
)
P
tot
E
AS
(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
30
30
鹵 20
60
43
240
85
1
300
-55 to 175
Unit
V
V
V
A
A
A
W
W/擄C
mJ
擄C
September 2003
1/11

STB70NH03L 產(chǎn)品屬性

  • 19 ns

  • 21 ns

  • 15.7 nC V @ 5

  • 2200 pF V @ 10

  • 表面貼裝

  • 9.35mm

  • D2PAK

  • 10.4 x 9.35 x 4.6mm

  • 3

  • -55 °C

  • 858000 mW

  • ±20 V

  • 30 V

  • 0.009

  • 60 A

  • +175 °C

  • 1

  • 功率 MOSFET

  • 增強(qiáng)

  • N

  • 單

  • 10.4mm

  • 4.6mm

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