鈩?/div>
V
RRM
30 V
I
D
70 A
V
F(MAX)
3
1
0.51 V
D2PAK
DESCRIPTION
This product associates a Power MOSFET of the
third genaration of STMicroelectronics unique 鈥?Sin-
gle Feature Size鈥?strip-based process and a low
drop Schottky diode. The transistor shows the best
trade-off between on-resistance and gate charge.
Used as low side in buck regulators, the product is
the solution in terms of conduction losses and space
saving.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Value
30
30
鹵
20
70
50
280
100
0.67
鈥?5 to 175
175
Unit
V
V
V
A
A
A
W
W/擄C
擄C
擄C
INTERNAL SCHEMATIC DIAGRAM
(
q
) Pulse width limi ted by safe operating area
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
dv/dt
Parameter
Repetitive Peak Reverse Voltage
RMS Forward Current
Average Forward Current
Surge Non Repetitive Forward Current
Critical Rate Of Rise Of Reverse Voltage
TL = 125擄C
未
= 0.5
tp = 10 ms
Sinusoidal
Value
20
20
3
75
10000
Unit
V
A
A
A
V/碌s
April 2001
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