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STB6NB90 Datasheet

  • STB6NB90

  • N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET

  • 51.23KB

  • 5頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STB6NB90
N - CHANNEL 900V - 1.7鈩?- 5.8A - D
2
PAK
PowerMESH鈩?MOSFET
PRELIMINARY DATA
TYPE
STB6NB90
s
s
s
s
s
s
V
DSS
900 V
R
DS(on)
< 2.0
鈩?/div>
I
D
5.8 A
TYPICAL R
DS(on)
= 1.7
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL (500 UNITS)
D
2
PAK
TO-263
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
INTERNAL SCHEMATIC DIAGRAM
Value
900
900
鹵
30
5.8
3.6
23
135
1.08
4.5
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
o
C
C
(鈥? Limited only by maximum temperature allowed
(
1
) I
SD
鈮?/div>
6 A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
February 1999
1/5

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