Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
2
PAK
TO-262
(suffix 鈥?1鈥?
D
2
PAK
TO-263
(Suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
鈥?/div>
)
P
tot
dv/dt(
1
)
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
Value
500
500
鹵
30
5.8
3.7
23.2
100
0.8
4.5
-65 to 150
150
(
1
) I
SD
鈮?/div>
6A, di/dt
鈮?/div>
200 A/
碌
s, V
DD
鈮?/div>
V
(BR)DSS
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
(
鈥?/div>
) Pulse width limited by safe operating area
November 1999
1/9
STB6NB50 產(chǎn)品屬性
STMicroelectronics
MOSFET
N-Channel
500 V
+/- 30 V
5.8 A
1.5 Ohms
Single
+ 150 C
SMD/SMT
D2PAK
Tube
5 ns
- 65 C
100 W
8 ns
50
STB6NB50相關(guān)型號PDF文件下載
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描述
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