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STB60NF06 Datasheet

  • STB60NF06

  • N-CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET⑩ POWER MOSFET

  • 9頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB60NF06
N-CHANNEL 60V - 0.014鈩?- 60A D2PAK
STripFET鈩?POWER MOSFET
TYPE
STB60NF06
s
s
s
s
V
DSS
60V
R
DS(on)
< 0.016
鈩?/div>
I
D
60A
s
TYPICAL R
DS
(on) = 0.014鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
ADD SUFFIX 鈥淭4鈥?FOR ORDERING IN TAPE &
REEL
3
1
D2PAK
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
s
AUTOMOTIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
dv/dt (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
60
60
鹵 20
60
42
240
110
0.73
4
鈥?5 to 175
175
(1) I
SD
鈮?/div>
60A, di/dt鈮?00 A/碌s, V
DD
鈮?/div>
24V, Tj鈮
jMAX
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
擄C
擄C
(
q
) Pulse width limited by safe operating area
February 2001
1/9

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