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STB60NF03L Datasheet

  • STB60NF03L

  • N-CHANNEL 30V - 0.008 ohm - 60A D2PAK STripFET POWER MOSFET

  • 50.88KB

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STB60NF03L
N-CHANNEL 30V - 0.008
鈩?/div>
- 60A D
2
PAK
STripFET鈩?POWER MOSFET
PRELIMINARY DATA
T YPE
STB60NF03L
s
s
V
DSS
30 V
R
DS(on)
< 0.01
鈩?/div>
I
D
60 A
s
s
TYPICAL R
DS(on)
= 0.008
鈩?/div>
OPTIMIMIZED FOR HIGH SWITCHING
OPERATIONS
LOW THRESHOLD DRIVE
LOGIC LEVEL GATE DRIVE
3
1
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size
鈩?/div>
鈥?strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
LOW VOLTAGE DC-DC CONVERTERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
HIGH EFFICIENCY SWITCHING CIRCUITS
D
2
PAK
TO-263
ADD SUFFIX 鈥漈4鈥?FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
E
AS
(
1
)
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
o
Value
30
30
鹵
20
60
42
240
100
0.67
650
-65 to 175
175
(
1
)
starting T
j
= 25 C, I
D
= 30A , V
DD
= 20V
o
Un it
V
V
V
A
A
A
W
W /
o
C
mJ
o
o
C
C
1/6
(鈥? Pulse width limited by safe operating area
September 1999

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